Transistors

Publication date : December 2004 SJC00324AED 1
2SC6036

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2162
Features
Low collector-emitter saturation voltage VCE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 12 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC500 mA
Peak collector current ICP 1A
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 12 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1µA
Forward current transfer ratio hFE VCE = 2 V, IC = 10 mA 270 680
Collector-emitter saturation voltage VCE(sat) IC = 200 mA, IB = 10 mA 250 mV
Transition frequency fTVCB = 2 V, IE = –10 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 10 V, f = 1 MHz 4.5pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collecter SSSMini3-F1 Package
1.20±0.05
0.52±0.03
0 to 0.01
0.15 max.
5°
0.15 min.
0.80±0.050.15 min.
0.33
(0.40)(0.40)
1 2
3
5°
0.80±0.05
1.20±0.05
+0.05
−0.02 0.10+0.05
−0.02
0.23+0.05
−0.02
Marking Symbol : 4U
This product complies with the RoHS Directive (EU 2002/95/EC).