Transistors
1
Publication date: May 2007 SJC00383AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2161GSilicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037G
■Features
•Low collector-emitter saturation voltage VCE(sat)
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −12 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−500 mA
Peak collector current ICP −1A
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −15 V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −12 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −15 V, IE = 0 − 0.1 µA
Forward current transfer ratio hFE VCE = −2 V, IC = −10 mA 270 680
Collector-emitter saturation voltage VCE(sat) IC = −200 mA, IB = −10 mA −250 mV
Transition frequency fTVCB = −2 V, IE = 10 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 4.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.