Transistors
Publication date: May 2005 SJC00335AED
1
2SC6050
Silicon NPN epitaxial planar type
For high frequency amplifi cation, oscillation and mixing
Features
Features
High transition frequency f
High transition frequency f
T
High transition frequency fT
High transition frequency f
Small collector output capacitance (Common base, input open circuited) C
Small collector output capacitance (Common base, input open circuited) C
ob
and reverse transfer capacitance (Common base) C
rb
Optimum for high-density mounting and downsizing of the equipment for
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package
0.6 mm
×
1.0 mm (height 0.39 mm)
Absolute Maximum Ratings
Absolute Maximum Ratings
T
a
= 25
a = 25
a
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
Tj
T
125
°
C
Storage temperature
T
stg
Tstg
T
−
55 to
+
125
°
C
Electrical Characteristics
Electrical Characteristics
T
a
= 25
a = 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
10
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10
E = 10
E
µ
A, I
C
= 0
3
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
E = 0
E
1
µ
A
Forward current transfer ratio
h
FE
hFE
h
V
CE
= 4 V, I
CE = 4 V, I
CE
C
= 5 mA
75
400
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 20 mA, I
B
= 4 mA
0.5
V
Transition frequency
f
T
fT
f
V
CB
= 4 V, I
E
=
E =
E
−
5 mA, f = 200 MHz
1.4
1.9
2.7
GHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 4 V, I
E
= 0, f = 1 MHz
E = 0, f = 1 MHz
E
1.4
pF
Reverse transfer capacitance (Common base)
C
rb
V
CB
= 4 V, I
E
= 0, f = 1 MHz
E = 0, f = 1 MHz
E
0.45
pF
Collector-base parameter
r
bb'
rbb'
r
c
c
c
V
CB
= 4 V, I
E
=
E =
E
−
5 mA, f = 31.9 MHz
11
ps
h
FE
hFE
h
ratio
FE ratio
FE
∆
h
∆h∆
FE
hFE
h
V
CE
= 4 V, I
CE = 4 V, I
CE
C
= 100
µ
A / V
CE
= 4 V, I
CE = 4 V, I
CE
C
=
C =
C
5 mA
0.75
1.6
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39+0.01
−0.03
0.25±0.05 0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.05±0.03
3
Marking Symbol: 6N
This product complies with the RoHS Directive (EU 2002/95/EC).