Transistors

Publication date: June 2007 SJC00405AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC6054G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2174G
Features
High forward current transfer ratio hFE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7 V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 2mA2mA mA 160 460
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V
Transition frequency fTVCB = 10 V, IE = -2 mA, f = 200 MHz 100 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSMini3-F3
Marking Symbol: 7M
Pin Name
1: Base
2: Emitter
3: Collector