This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
1
Publication date: January 2003 SJC00189CED
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
■Features
•Large collector power dissipation PC
•Low collector-emitter saturation voltage VCE(sat)
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC1A
Peak collector current ICP 1.5 A
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 060V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Forward current transfer ratio hFE1 *VCE = 10 V, IC = 500 mA 85 340
hFE2 VCE = 5 V, IC = 1 A 50
Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V
Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V
Transition frequency fTVCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 20 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Note) The part number in the parenthesis shows conventional part number.