Transistors

Publication date: October 2008 SJC00191DED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0602A

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SB0710A
Features
Low collector-emitter saturation voltage VCE(sat)
Mini type package, allowing downsizing of the eq uipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC500 mA
Peak collector current ICP 1 A
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 mA
Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC = 150 mA 85 340
hFE2 VCE = 10 V, IC = 500 mA 40
Collector-emitter saturation voltage *1VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 V
Transition frequency fTVCB = 10 V, IE = -50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol XQ XR XS X
Product of no-rank is not classified and have no indication for rank.
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: X