Transistors
1
Publication date: January 2003 SJC00196CED
2SD0814A (2SD814A)
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■Features
•High collector-emitter voltage (Base open) VCEO
•Low noise voltage NV
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 185 V
Collector-emitter voltage (Base open) VCEO 185 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC50 mA
Peak collector current ICP 100 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 185 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Collector-base cutoff current (Emitter open)
ICBO VCB = 100 V, IE = 01µA
Forward current transfer ratio *hFE VCE = 5 V, IC = 10 mA 90 330
Collector-emitter saturation voltage VCE(sat) IC = 30 mA, IB = 3 mA 1 V
Transition frequency fTVCB = 10 V, IE = −10 mA, f = 200 MHz 150 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF
(Common base, input open circuited)
Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 150 mV
Rg = 100 kΩ, Function = FLAT
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank Q R S
hFE 90 to 155 130 to 220 185 to 330
Note) The part number in the parenthesis shows conventional part number.