Transistors
1
Publication date: January 2003 SJC00208BED
2SD1149
Silicon NPN epitaxial planar type
For low-frequency amplification
■Features
•High forward current transfer ratio hFE
•Low collector-emitter saturation voltage VCE(sat)
•High emitter-base voltage (Collector open) VEBO
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 100 V
Collector-emitter voltage (Base open) VCEO 100 V
Emitter-base voltage (Collector open) VEBO 15 V
Collector current IC20 mA
Peak collector current ICP 50 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 100 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 100 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 015V
Collector-base cutoff current (Emitter open)
ICBO VCB = 60 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 60 V, IB = 0 1.0 µA
Forward current transfer ratio *hFE VCE = 10 V, IC = 2 mA 400 1
200
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA 0.05 0.20 V
Transition frequency fTVCB = 10 V, IE = −2 mA, f = 200 MHz 100 MHz
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Rank R S
hFE 400 to 800 600 to 1
200
Marking symbol 1V
This product complies with the RoHS Directive (EU 2002/95/EC).