Transistors

Publication date: October 2008 SJC00414AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1478A

Silicon NPN epitaxial planar type darlington

For low frequency amplification
Features
Forward current transfer ratio hFE is designed high, which is appropriate to the
driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC500 mA
Peak collector current ICP 750 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 mA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 100 mA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 100 nA
Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 100 nA
Forward current transfer ratio *1, *2hFE VCE = 10 V, IC = 500 mA 4
000 20
000
Collector-emitter saturation voltage *1VCE(sat) IC = 500 mA, IB = 0.5 mA 2.5 V
Base-emitter saturation voltage *1VBE(sat) IC = 500 mA, IB = 0.5 mA 3.0 V
Transition frequency fTVCB = 10 V, IE = -50 mA, f = 200 MHz 200 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R
hFE 4
000 to 10
000 8
000 to 20
000
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: 2O
Internal Connection
B
C
E