Transistors

1
Publication date: May 2007 SJC00372AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1819G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SB1218G
■Features
•High forward current transfer ratio hFE
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 060V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 07V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 10 V, IB = 0 100 µA
Forward current transfer ratio hFE1 *VCE = 10 V, IC = 2 mA 160 460
hFE2 VCE = 2 V, IC = 100 mA 90
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V
Transition frequency fTVCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S No rank
hFE1 160 to 260 210 to 340 290 to 460 160 to 460
Marking symbol ZQ ZR ZS Z
Product of no-rank is not classified and have no marking symbol for rank.
■Package
•Code
SMini3-F2
•Marking Symbol: Z
•Pin Name
1: Base
2: Emitter
3: Collector