Transistors

1
Publication date: May 2007 SJC00373AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1820G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SB1219G
Features
Low collector-emitter saturation voltage VCE(sat)
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25°C
Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2:Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC500 mA
Peak collector current ICP 1A
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg 55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 060V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC = 150 mA 85 340
hFE2 VCE = 10 V, IC = 500 mA 40
Collector-emitter saturation voltage *1VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 V
Transition frequency *1fTVCB = 10 V, IE = 50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
(Common base, input open circuited)
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol XQ XR XS X
Product of no-rank is not classified and have no marking symbol for rank.
Package
Code
SMini3-F2
Marking Symbol: X
Pin Name
1: Base
2: Emitter
3: Collector