Transistors
1
Publication date: May 2007 SJC00374AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821GSilicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■Features
•High collector-emitter voltage (Base open) VCEO
•Low noise voltage NV
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■Absolute Maximum Ratings Ta = 25°C
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
hFE 130 to 220 185 to 330
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 185 V
Collector-emitter voltage (Base open) VCEO 185 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC50 mA
Peak collector current ICP 100 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 185 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Collector-base cutoff current (Emitter open)
ICBO VCB = 100 V, IE = 01µA
Forward current transfer ratio *hFE VCE = 5 V, IC = 10 mA 130 330
Collector-emitter saturation voltage VCE(sat) IC = 30 mA, IB = 3 mA 1 V
Transition frequency fTVCB = 10 V, IE = −10 mA, f = 200 MHz 150 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF
(Common base, input open circuited)
Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 150 mV
Rg = 100 kΩ, Function = FLAT