Transistors
1
Publication date: April 2003 SJC00229BED
2SD1823Silicon NPN epitaxial planar type
For low-frequency amplification
■Features
•High forward current transfer ratio hFE
•Low collector-emitter saturation voltage VCE(sat)
•High emitter-base voltage (Collector open) VEBO
•Low noise voltage NV
•S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 40 V
Emitter-base voltage (Collector open) VEBO 15 V
Collector current IC50 mA
Peak collector current ICP 100 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 050V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 040V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 015V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 20 V, IB = 01µA
Forward current transfer ratio *hFE VCE = 10 V, IC = 2 mA 400 2
000
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA 0.05 0.20 V
Transition frequency fTVCB = 10 V, IE = −2 mA, f = 200 MHz 120 MHz
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
2.1
±0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5°
10°
Rank R S T
hFE 400 to 800 600 to 1
200 1
000 to 2
000
Marking symbol: 1Z
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package