SHD00736AEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: November 2008 1Light Emitting Diodes
LN840RPXRound Type
φ4.4 mm
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation PD90 mW
Forward current IF30 mA
Pulse forward current *IFP 150 mA
Reverse voltage VR3 V
Operating ambient temperature Topr –25 to +85 °C
Storage temperature Tstg –30 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.Electro-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity IOIF = 20 mA 2.0 4.5 mcd
Reverse current IRVR = 3 V 10 µA
Forward voltage VFIF = 20 mA 2.1 2.8 V
Peak emission wavelength λPIF = 20 mA 630 nm
Spectral half band width Δλ IF = 20 mA 40 nm
Directive characteristics
Relative luminous intensity (%) Ambient temperature Ta (°C)Ambient temperature Ta (°C)Forward current IF (mA)Forward voltage VF (V)Forward current IF (mA)
Luminous intensity IO (mcd)Relative luminous intensity (%)Relative luminous intensity Ta
Relative luminous intensity λP
Peak emission wavelength λP (nm)
Relative luminous intensity (%)Forward current IF (mA)00
0
10
20
30
40
50
20 40 60 80 100
01.6 1.8 2.0 2.2 2.4 −20 20 40 60 80 100
10
1
3
5
10
30
50
100
30
50
100
300
500
1
000
20 2040 4060 6080 80100 100
0
20
40
60
80
100
600550 650 700
1 3 5 10 30 50 100
0°10°10°20°20°
30°30°
40°40°
50°50°
60°60°
70°70°
80°80°
80°
60°
40°
20°
90°90°
0.1
0.3
0.5
1
3
10
5
30
50
100