SHC00037CED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008 1
Infrared Light Emitting Diodes
LNA4905LGaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency: PO = 15 mW (min.)
Fast response and high-speed modulation capability: fC = 30 MHz (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation PD190 mW
Forward current IF100 mA
Pulse forward current *IFP 1 A
Reverse voltage VR3 V
Operating ambient temperature Topr –25 to +85 °C
Storage temperature Tstg –30 to +100 °C
Note) *: f = 100 Hz, Duty cycle = 0.1%
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Radiant power POIF = 50 mA 15 mW
Reverse current IRVR = 3 V 10 µA
Forward voltage VFIF = 100 mA 1.7 2.1 V
Peak emission wavelength λPIF = 50 mA 880 nm
Spectral half band width Δλ IF = 50 mA 50 nm
Half-power angle θThe angle when the radiant power is halved. 15 °
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Cutoff frequency: 30 MHz
fC : 10 × log
PO at f = fC
= −3
PO at f = 1 MHz
3. A light detection element uses a silicon diode have proofread a load with a standard device.
4. LED might radiate red light under large current drive.