SHD00639BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: December 2008 1

Light Emitting Diodes

LNJ0F1C5FRA4

Hight Bright Surface Mounting Chip LED

Strobe Type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation PD103 mW
Forward current IF25 mA
Pulse forward current *IFP 50 mA
Reverse current IR100 mA
Operating ambient temperature Topr –30 to +85 °C
Storage temperature Tstg –40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity IO-20 IF = 20 mA / chip 1
350 1
800 mcd
Forward voltage VFIF = 20 mA / chip 3.0 3.4 4.0 V
Chromaticity coordinates
x IF = 20 mA / chip 0.280 0.320
y IF = 20 mA / chip 0.260 0.383
00
10
20
30
40
50
60
20 40 60 80 100
01.0 2.0 3.0 4.0 5.0 6.0 −20 20 40 60 80 100
10
1
3
5
10
30
50
100
30
50
100
300
500
1
000
20 2040 4060 6080 80100 100
1 3 5 10 30 50 100
0°10°−10°20°−20°
30°−30°
40°−40°
50°−50°
60°−60°
70°−70°
80°−80°
80°
60°
40°
20°
90°−90°
10
50
30
500
300
100
1
000
5
000
3
000
10
000
Y
X
Y
X
DC
IFP
Directive characteristics
Relative luminous intensity (%) Ambient temperature Ta (°C)Ambient temperature Ta (°C)
Forward current IF (mA)
Forward voltage VF (V)Luminous intensity IO (mcd)Relative luminous intensity (%)
Forward current IF (mA)
Forward current IF (mA)
IO IFIF VF
IF Ta
Relative luminous intensity Ta
Lighting Color
White