SHD00693BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009 1

Light Emitting Diodes

LNJ253W82RA

Hight Bright Surface Mounting Chip LED

SV (Side View) -0.5 Type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation PD55 mW
Forward current IF20 mA
Pulse forward current *IFP 60 mA
Reverse voltage VR4 V
Operating ambient temperature Topr –30 to +85 °C
Storage temperature Tstg –40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity *1IOIF = 10 mA 8.0 15.0 60.8 mcd
Reverse current IRVR = 4 V 100 µA
Forward voltage VFIF = 10 mA 1.92 2.5 V
Peak emission wavelength λPIF = 10 mA 645 nm
Dominant emission wavelength *2λdIF = 10 mA 620 630 640 nm
Spectral half band width Δλ IF = 10 mA 22 nm
Note) *1: Measurement tolerance: ±20% *2: Measurement tolerance: ±3 nm
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01.6 1.8 2.0 2.2 2.4 −20 20 40 60 80 100
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IO IFIF VF
IF Ta
Directive characteristics
Relative luminous intensity (%) Ambient temperature Ta (°C)Ambient temperature Ta (°C)Forward current IF (mA)
Forward voltage VF (V)Forward current IF (mA)
Luminous intensity IO (mcd)Relative luminous intensity (%)
Relative luminous intensity Ta
Relative luminous intensity λP
Peak emission wavelength λP (nm)
Relative luminous intensity (%)Forward current IF (mA)
Lighting Color
Red