Schottky Barrier Diodes (SBD)

Publication date: August 2008 SKH00161CED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA21D340G

Silicon epitaxial planar type

For rectification
Features
Forward current (Average) IF(AV) = 1.0 A rectification is possible
Low forward voltage VF
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current (Average) IF(AV) 1.0 A
Non-repetitive peak forward surge current
*IFSM 20 A
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 0.7 A 0.33 0.36 V
VF2 IF = 1.0 A 0.35 0.38
Reverse current IRVR = 30 V 1
200 mA
Terminal capacitance CtVR = 10 V, f = 1 MHz 45 pF
Reverse recovery time *trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W14 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Package
Code
SMini2-F2
Pin Name
1: Anode
2: Cathode
Marking Symbol: 4V