1

Schottky Barrier Diodes (SBD)

Publication date: October 2003 SKH00126AEDMA22D28

Silicon epitaxial planar type

For high speed switching
■Features
•Forward current IF(AV) = 1.5 A rectification is possible
•Low forward voltage VF
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR30 VRepetitive peak reverse voltage VRRM 30 VForward current (Average) *1IF(AV) 1.5 ANon-repetitive peak forward IFSM 30 A
surge current *2
Junction temperature Tj150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VF1 IF = 0.5 A 0.34 0.38 VVF2 IF = 1.0 A 0.38 0.42VF3 IF = 1.5 A 0.42 0.46Reverse current IRVR = 30 V 100 µATerminal capacitance CtVR = 10 V, f = 1 MHz 50 pFReverse recovery time *trr IF = IR = 100 mA 13 nsIrr = 10 mA , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.*: trr measuring instrument1: Anode2: CathodeMini2-F1 PackageUnit: mm5˚1.6
±0.1
120.80
±0.05
0.55
±0.1
0.16
+0.1
–0.06
3.5
±0.1
2.6
±0.1
0.45
±0.1
5˚0 to 0.10 to 0.30 to 0.190%tp = 2 µstr = 0.35 nsδ = 0.05IF = 100 mAIR = 100 mARL = 100 Ω10%Input Pulse Output PulseIrr = 10 mA
trtp
trr
IF
ttBias Application Unit (N-50BU)Pulse Generator(PG-10N)Rs = 50 ΩWave FormAnalyzer(SAS-8130)
Ri = 50 ΩVR
A
Marking Symbol: 3Z
Note) *1:Mounted on a alumina PC board*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
This product complies with the RoHS Directive (EU 2002/95/EC).