Fast Recovery Diodes (FRD)

Publication date: November 2007 SKJ00017AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA22F20

Silicon epitaxial planar type

For high speed switching circuits
Features
Super high speed switching characteristic (trr = 8 ns typ.)
At the same time as lowering the wiring inductance and increasing the peak
surge forward current, the resistance to surge damage at power on has been
increased by adopting clip connection package (TMP).
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage VRRM 200 V
Non-repetitive peak reverse surge voltage
VRSM 200 V
Forward current *1IF1.0 A
Non-repetitive peak forward surge current
*2IFSM 15 A
Junction temperature Tj–40 to +150 °C
Storage temperature Tstg –40 to +150 °C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 1.0 A 0.85 0.98 V
Reverse current IRRM VRRM = 200 V 20 mA
Terminal capacitance CtVR = 0 V, f = 1 MHz 45 pF
Reverse recovery time *trr
IF = 0.5 A, IR = 1 A
Irr = 0.25 A 8 35 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 200 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 × IR
trtp
trr
VR
IF
t
t
A
Package
Code
Mini2-F1
Pin Name
1: Anode
2: Cathode
Marking Symbol: FB