Schottky Barrier Diodes (SBD)
Publication date: November 2005 SKH00150AED 1
MA24D50Silicon epitaxial planar type
For rectification
Features
Forward current (Average) IF(AV) = 3.0 A rectification is possible
Low forward voltage VF
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR40 V
Maximum peak reverse voltage VRM 40 V
Forward current (Average)
*1IF(AV) 3.0A
Non-repetitive peak forward surge current
*2IFSM 60 A
Junction temperature Tj150 °C
Storage temperature Tstg –40 to +150 °C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 3.0 A 0.46 0.51 V
Reverse current IRVR = 40 V 40 200 µA
Terminal capacitance CtVR = 10 V, f = 1 MHz 105 pF
Reverse recovery time *trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 Ω33 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Unit : mm
1 : Anode
2 : Cathode TMiniP2-F1 Package
2.40±0.10 0.15±0.05
1
2
1.75±0.05
4.70±0.10
3.80±0.050.450±0.05
5°
0 to 0.40
0 to 0.03
0.90MAX
5°
Marking Symbol: 5R
This product complies with the RoHS Directive (EU 2002/95/EC).