Schottky Barrier Diodes (SBD)
Publication date: September 2006 SKH00154AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24D51
Silicon epitaxial planar type
For rectifi cation
Features
Features
Allowing low-profi le mounting
Allowing low-profi le mounting
Forward current (Average) I
Forward current (Average) I
F(AV)
= 3 A rectifi cation is possible
Low forward voltage V
Low forward voltage V
F
Low forward voltage VF
Low forward voltage V
Absolute Maximum Ratings
Absolute Maximum Ratings
T
a
= 25
a = 25
a
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
VRM
V
40
V
Forward current (Average)
*
1
I
F(AV)
3.0
A
Non-repetitive peak forward surge current
*
2
I
FSM
60
A
Junction temperature
T
j
Tj
T
150
°
C
Storage temperature
T
stg
Tstg
T
–40 to +150
°
C
Note)
*
1: Mounted on an alumina PC board
*
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
Electrical Characteristics
T
a
= 25
a = 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
VF
V
I
F
= 3.0 A
0.37
0.42
V
Reverse current
I
R
V
R
= 40 V
R = 40 V
R
2
mA
Thermal resistance (j-a)
*
R
th(j-a)
Rth(j-a)
R
60
°
C/W
Thermal resistance (j-l)
R
th(j-l)
Rth(j-l)
R
10
°
C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*
: Mounted on an alumina PC board
Unit: mm
1: Anode
2: Cathode TMiniP2-F1 Package
2.40±0.10 0.15±0.05
1
2
1.75±0.05
4.70±0.10
3.80±0.050.450±0.05
5°
0 to 0.40
0 to 0.03
0.90MAX
5°