Schottky Barrier Diodes (SBD)

Publication date: March 2007 SKH00160AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24D54

Silicon epitaxial planar type

For rectification
Features
Forward current (Average) IF(AV) = 3.0 A rectification is possible
Small reverse current IR
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current (Average) *IF(AV) 3.0 A
Non-repetitive peak forward surge
current IFSM 60 A
Junction temperature Tj150 °C
Storage temperature Tstg –40 to +150 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current VFIF = 3.0 A 0.37 V
Reverse current IRVR = 30 V 2.0 mA
Terminal capacitance CtVR = 10 V, f = 1 MHz 125 pF
Reverse recovery time *1trr
IF = IR = 100 mA, Irr = 10 mA
RL = 100 W40 ns
Thermal resistance
Rth(j-a) *255
°C/W
Rth(j-a) *3210
Rth(j-l) 10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
3. *1: trr test Circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
*2: Mounted on an alumina PC board (board: 50 mm × 50 mm × 0.8 t, soldering land: 1.4 mm × 2.1 mm) *3: With a glass epoxy PC board (board: 50 mm × 20 mm × 1.0 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
Unit: mm1: Anode2: Cathode TMiniP2-F1 Package
2.40±0.10 0.15±0.05
1
2
1.75±0.05
4.70±0.10
3.80±0.050.450±0.05
5°
0 to 0.40
0 to 0.03
0.90 max.
5°
Marking Symbol: 4S