Fast Recovery Diodes (FRD)
Publication date: February 2007 SKJ00018AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA24F41Silicon epitaxial planar type
For high speed switching circuits
Features
Super high speed switching characteristic (trr = 15 nsec typ.)
At the same time as lowering the wiring inductance and increasing the peak
surge forward current, the resistance to surge damage at power on has been
increased by adopting clip connection package (TMP).
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage VRRM 400 V
Non-repetitive peak reverse surge voltage
VRSM 400 V
Forward current *1IF1.0 A
Non-repetitive peak forward surge current
*2IFSM 20 A
Junction temperature Tj–40 to +150 °C
Storage temperature Tstg –40 to +150 °C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 800 mA 1.0 1.3 V
Reverse current IRRM VRRM = 400 V 20 mA
Terminal capacitance CtVR = 0 V, f = 1 MHz 30 pF
Reverse recovery time *trr
IF = 0.5 A, IR = 1.0 A
Irr = 0.25 A 15 45 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: trr measurement circuit
D.U.T
trr
0.25 × IR
IF
IR
50 Ω
5.5 Ω
50 Ω
Unit: mm
1 : Anode
2 : Cathode TMiniP2-F1 Package
2.40±0.10 0.15±0.05
1
2
1.75±0.05
4.70±0.10
3.80±0.050.450±0.05
5°
0 to 0.40
0 to 0.03
0.90MAX
5°