Fast Recovery Diodes (FRD)
Publication date: November 2008 SKJ00022AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24F70Silicon epitaxial planar type
For high speed switching circuits
Features
Super high speed switching characteristic: trr = 15 ns (typ.)
Low impedance by clip bonding package (TMP)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage VRRM 700 V
Non-repetitive peak reverse surge voltage VRSM 700 V
Forward current *1IF1.0 A
Non-repetitive peak forward surge current
*2IFSM 20 A
Junction temperature Tj-40 to +150 °C
Storage temperature Tstg -40 to +150 °C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 1.0 A 1.3 1.7 V
Reverse current IRRM VRRM = 700 V 20 mA
Terminal capacitance CtVR = 0 V, f = 1 MHz 25 pF
Reverse recovery time *trr
IF = 0.5 A, IR = 1.0 A
Irr = 0.25 A 15 45 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. *: trr measurement circuit
50 Ω50 Ω
5.5 Ω
D.U.T.
IF
IR
0.25 × IR
trr
Package
Code
TMiniP2-F1
Pin Name
1: Anode
2: Cathode