Publication date: May 2005 SKL00019AED
1
PIN diodes
MA26P02
Silicon epitaxial planar type
For high frequency switch
Features
Features
Small terminal capacitance C
Small terminal capacitance C
t
Low forward dynamic resistance r
Low forward dynamic resistance r
f
Low forward dynamic resistance rf
Low forward dynamic resistance r
Miniature package and surface mounting type
Miniature package and surface mounting type
Absolute Maximum Ratings
Absolute Maximum Ratings
T
a
= 25
a = 25
a
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
60
V
Forward current
I
F
100
mA
Junction temperature
T
j
Tj
T
150
°
C
Storage temperature
T
stg
Tstg
T
–55 to +150
°
C
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Electrical Characteristics
Electrical Characteristics
T
a
= 25
a = 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
VF
V
I
F
= 10 mA
1.0
V
Reverse current
I
R
V
R
= 60 V
R = 60 V
R
100
nA
Terminal capacitance
C
t
V
R
= 1 V, f = 1 MHz
R = 1 V, f = 1 MHz
R
0.5
pF
Forward dynamic resistance
r
f
rf
r
I
F
= 10 mA, f = 100 MHz
2.0
Ω
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Marking Symbol: P2
Unit: mm
1: Anode
2: Cathode ML-2-N1 Package
0.60±0.05
1.00±0.05
12
0.39+0.01
−0.03
0.25±0.05 0.25±0.05
0.50±0.05
0.65±0.01
1
0.05±0.03
0.05±0.03
2
0.01±0.005
This product complies with the RoHS Directive (EU 2002/95/EC).