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Publication date: October 2007 SKG00019AED
Band Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27077G
Silicon epitaxial planar type
For band switching
■Features
•Low forward dynamic resistance rf
•Less voltage dependence of diode capacitance CD
•SSS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR35 V
Forward current IF100 mA
Operating ambient temperature *Topr −25 to +85 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 0.92 1.00 V
Reverse current IRVR = 33 V 0.01 100.00 nA
Diode capacitance CDVR = 6 V, f = 1 MHz 0.9 1.2 pF
Forward dynamic resistance *rfIF = 2 mA, f = 100 MHz 0.65 0.85 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) *:Maximum ambient temperature during operation.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
■Package
•Code
SSSMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: C