Switching Diodes
1
Publication date: November 2003 SKF00066BED
MA27111
Silicon epitaxial planar type
For high-speed switching circuits
■Features
•High-density mounting is possible
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current IF100 mA
Peak forward current IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 0.95 1.20 V
Reverse voltage VRIR = 100 µA80
Reverse current IRVR = 75 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 0.6 2.0 pF
Reverse recovery time *trr IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 10 MHz.
3.*: trr measurement circuit
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: S
5°
5°
0.27
2
1
1.40±0.05
0.52±0.03
1.00±0.05
0.60±0.05
0.15 min.
0 to 0.01
0.15 min.0.15 max.
+0.05
–0.02 0.13+0.05
–0.02
Note) *: t = 1 s
This product complies with the RoHS Directive (EU 2002/95/EC).