Switching Diodes
1
Publication date: October 2007 SKF00072AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA271110G
Silicon epitaxial planar type
For high-speed switching circuits
■Features
•High-density mounting is possible
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current IF100 mA
Peak forward current IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 0.95 1.20 V
Reverse voltage VRIR = 100 µA80
Reverse current IRVR = 75 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 0.6 2.0 pF
Reverse recovery time *trr IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 10 MHz.
3.*: trr measurement circuit
Note) *: t = 1 s
■Package
•Code
SSSMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: S