Schottky Barrier Diodes (SBD)
1
Publication date: November 2003 SKH00129AED
MA27E02
Silicon epitaxial planar type
For cellular phone
■Features
•High-frequency wave detection is possible.
•Low forward voltage VF
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Maximum peak reverse voltage VRM 20 V
Forward current IF35 mA
Peak forward current IFM 100 mA
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.40 V
VF2 IF = 35 mA 1.0 V
Reverse current IRVR = 15 V 200 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 1.2 pF
Forward dynamic resistance rfIF = 5 mA 9 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: G
Unit: mm
5°
5°
0.27
2
1
1.40±0.05
0.52±0.03
1.00±0.05
0.60±0.05
0.15 min.
0 to 0.01
0.15 min.0.15 max.
+0.05
–0.02 0.13+0.05
–0.02
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Rated input/output frequency: 2 GHz
1: Anode
2: Cathode
SSSMini2-F2 Package
This product complies with the RoHS Directive (EU 2002/95/EC).