1
Publication date: March 2004 SKL00008BED

PIN diodes

MA27P02

Silicon epitaxial planar type

For high frequency switch
■Features
•Small terminal capacitance Ct
•Small forward dynamic resistance rf
•Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF100 mA
Power dissipation *PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °CMarking Symbol: Y
1: Anode
2: Cathode
SSSMini2-F2 Package
5°
5°
0.27
2
1
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.15 min.
0 to 0.01
0.15 min.0.15 max.
+0.05
–0.02
0.13
+0.05
–0.02
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 1.0 V
Reverse current IRVR = 60 V 100 nA
Terminal capacitance CtVR = 1 V, f = 1 MHz 0.5 pF
Forward dynamic resistance *rfIF = 10 mA, f = 100 MHz 2.0 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *:r
f measurement device ; agilent model 4291B
Note) *:With a glass epoxy PC board
This product complies with the RoHS Directive (EU 2002/95/EC).