1
PIN Diodes
Publication date: September 2003 SKL00015AED
MA27P06
Silicon planar type
For high frequency switch
■Features
•Low terminal capacitance: Ct ≤ 0.6 pF
•Low forward dynamic resistance: rf ≤ 1.2 Ω
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF100 mA
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.85 1.0 V
Reverse current IRVR = 60 V 1.0 100 nA
Terminal capacitance CtVR = 1 V, f = 1 MHz 0.45 0.6 pF
Forward dynamic resistance rfIF = 10 mA, f = 100 MHz 0.80 1.2 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
1: Anode
2: Cathode
SSSMini2-F2 Package
Unit: mm
5°
5°
0.27
1
2
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.15 min.
0 to 0.01
0.15 min.0.15 max.
+0.05
–0.02
0.12
+0.05
–0.02
Marking Symbol: M
This product complies with the RoHS Directive (EU 2002/95/EC).