1
PIN Diodes
Publication date: September 2003 SKL00016AEDMA27P07Silicon planar type
For high frequency switch
■Features
•Low terminal capacitance: Ct ≤ 0.35 pF
•Low forward dynamic resistance: rf ≤ 1.5 Ω
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR60 VForward current IF100 mAPower dissipation PD150 mWJunction temperature Tj150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 10 mA 1.0 VReverse current IRVR = 60 V 100 nATerminal capacitance CtVR = 1 V, f = 1 MHz 0.35 pFForward dynamic resistance rfIF = 10 mA, f = 100 MHz 1.5 Ω■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.1: Anode2: CathodeSSSMini2-F2 PackageUnit: mm5°5°0.27121.40±0.05
0.52±0.03
1.00±0.05
0.60±0.05
0.15 min.0 to 0.010.15 min.0.15 max.+0.05
–0.02
0.12+0.05
–0.02