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Publication date: April 2003 SKL00014AED

PIN diodes

MA27P11

Silicon epitaxial planar type

For high frequency switch
■Features
•Low terminal capacitance
•Low forward dynamic resistance
•SSS-Mini type 2-pin package
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF50 mA
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Marking Symbol: F
1: Anode
2: Cathode
SSSMini2-F2 Package
5°
5°
0.27
1
2
1.40±0.05
0.52±0.03
1.00±0.05
0.60±0.05
0.15 min.
0 to 0.01
0.15 min.0.15 max.
+0.05
–0.02 0.12+0.05
–0.02
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.76 0.85 V
VF2 IF = 10 mA 0.85 1.00 V
Reverse current IRVR = 60 V 1 .0 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 0.55 0.80 pF
Forward dynamic resistance rf1 IF = 1 mA, f = 100 MHz 1.6 3.0 Ω
rf2 IF = 10 mA, f = 100 MHz 0.9 1.5 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
This product complies with the RoHS Directive (EU 2002/95/EC).