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Publication date: October 2007 SKL00026AED
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27P110GSilicon epitaxial planar type
For high frequency switch
■Features
•Low terminal capacitance
•Low forward dynamic resistance
•SSS-Mini type 2-pin package
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF50 mA
Power dissipation *PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.76 0.85 V
VF2 IF = 10 mA 0.85 1.00 V
Reverse current IRVR = 60 V 1 .0 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 0.55 0.80 pF
Forward dynamic resistance rf1 IF = 1 mA, f = 100 MHz 1.6 3.0 Ω
rf2 IF = 10 mA, f = 100 MHz 0.9 1.5 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
■Package
•Code
SSSMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: F
Note)*: With a glass epoxy PC board.