PIN diodes

Publication date: October 2007 SKL00027AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA27P120G

Silicon planar type

For high frequency switch
Features
Small terminal capacitance Ct
Low forward dynamic resistance rf
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF100 mA
Power dissipation *PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *: With a glass epoxy PC board.
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current VFIF = 10 mA 1.0 V
Reverse current IRVR = 60 V 100 nA
Terminal capacitance CtVR = 1 V, f = 1 MHz 0.27 pF
Forward dynamic resistance *rfIF = 10 mA, f = 100 MHz 0.8 W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: rf measurement device: agilent model 4291B
Package
Code
SSSMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: U