Fast Recovery Diodes (FRD)

Publication date: December 2008 SKJ00023AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2DF31

Silicon mesa type

For high frequency rectification
Features
Super high speed switching characteristic: trr = 20 ns (typ.)
Low noise type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage VRRM 300 V
Non-repetitive peak reverse surge voltage VRSM 300 V
Forward current (Average) *1IF(AV) 5 A
Non-repetitive peak forward surge current
*2IFSM 30 A
Junction temperature Tj+150 °C
Storage temperature Tstg -40 to +150 °C
Note) *1: TC = 25°C
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 5 A 1.0 1.3 V
Reverse current IRRM VRRM = 300 V 20 mA
Reverse recovery time *trr
IF = 0.5 A, IR = 1.0 A
Irr = 0.25 A 20 30 ns
Thermal resistance (j-c) Rth(j-c) 3.0 °C/W
Thermal resistance (j-a) Rth(j-a) 63 °C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. *: trr measurement circuit
50 Ω50 Ω
5.5 Ω
D.U.T.
IF
IR
0.25 × IR
trr
Package
Code
TO-220D-B1
Pin Name
1: Cathode
2: Anode
Marking Symbol: MA2DF31