Switching Diodes

1
Publication date: March 2004 SKF00011BED
Note) *:t = 1 s
MA2J111 (MA111)

Silicon epitaxial planar type

For switching circuits
■Features
•Allowing high-density mounting
•Short reverse recovery time trr
•Small terminal capacitance Ct
•High breakdown voltage: VR = 80 V
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating UnitReverse voltage VR80 VMaximum peak reverse voltage VRM 80 VForward current IF100 mAPeak forward current IFM 225 mANon-repetitive peak forward IFSM 500 mAsurge current
*
Junction temperature Tj150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 100 mA 0.95 1.20 VReverse voltage VRIR = 100 µA80VReverse current IRVR = 75 V 100 nATerminal capacitance CtVR = 0 V, f = 1 MHz 0.6 1.2 pFReverse recovery time *trr IF = 10 mA, VR = 6 V 3 nsIrr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: 1B
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
ANote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2.Absolute frequency of input and output is 100 MHz.3.*: trr measurement circuitNote) The part number in the parenthesis shows conventional part number.
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
This product complies with the RoHS Directive (EU 2002/95/EC).