Switching Diodes

1
Publication date: October 2007 SKF00073AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J1120G

Silicon epitaxial planar type

For switching circuits
■Features
•Allowing high-density mounting
•Ensuring the forward current (Average) capacity IF(AV) = 200 mA
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR40 V
Maximum peak reverse voltage VRM 40 V
Forward current (Average) *1IF(AV) 200 mA
Peak forward current IFM 600 mA
Non-repetitive peak forward IFSM 1A
surge current
*2
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 1.1 V
Reverse current IR1 VR = 15 V 50 nA
IR2 VR = 35 V 500
IR3 VR = 35 V, Ta = 100°C 100 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 4 pF
Reverse recovery time *trr IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Note) *1:With a printed-circuit board
*2:t = 1 s
■Package
•Code
SMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: 1C