Switching Diodes
1
Publication date: March 2004 SKF00013BED
MA2J113 (MA113)
Silicon epitaxial planar type
For switching circuits
■Features
•Allowing high-density mounting
•Ensuring the forward current (Average) capacity IF(AV) = 200 mA
•High breakdown voltage: VR = 80 V
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating UnitReverse voltage VR80 VMaximum peak reverse voltage VRM 80 VForward current (Average) IF(AV) 200 mAPeak forward current IFM 600 mANon-repetitive peak forward IFSM 1Asurge current *
Junction temperature Tj150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 200 mA 1.1 VReverse current IR1 VR = 15 V 50 nAIR2 VR = 75 V 500IR3 VR = 75 V, Ta = 100°C 100 µATerminal capacitance CtVR = 0 V, f = 1 MHz 4 pFReverse recovery time *trr IF = 10 mA, VR = 6 V 10 nsIrr = 0.1 IR , RL = 100 Ω■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: 1D
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
ANote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2.Absolute frequency of input and output is 100 MHz.3.*: trr measurement circuitNote) The part number in the parenthesis shows conventional part number.1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Note) *:t = 1 s