Rectifier Diodes
1
Publication date: March 2004 SKC00001BED
MA2J114 (MA114)
Silicon epitaxial planar type
For small power rectification
■Features
•S-mini type package, allowing high-density mounting
•High reverse voltage VR
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 1.2 V
Reverse current IRVR = 150 V 200 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 4.5 pF
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Reverse voltage VR150 V
Maximum peak reverse voltage VRM 150 V
Output current IO200 mA
Repetitive peak forward current IFRM 600 mA
Non-repetitive peak forward IFSM 1A
surge current
*
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) *: t = l s
Marking Symbol: 1E
Note) The part number in the parenthesis shows conventional part number.
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 3 MHz.