Switching Diodes

1
Publication date: November 2007 SKF00094AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J1150G

Silicon epitaxial planar type

For small power current rectification
■Features
•S-mini type package, allowing high-density mounting
•High reverse voltage VR
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 1.2 V
Reverse current IRVR = 200 V 200 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 4.5 pF
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Reverse voltage VR200 V
Maximum peak reverse voltage VRM 200 V
Output current IO200 mA
Repetitive peak forward current IFRM 600 µA
Non-repetitive peak forward IFSM 1A
surge current
*
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) *: t = l s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 3 MHz.
■Package
•Code
SMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: 1F