Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00170AEDThis product complies with the RoHS Directive (EU 2002/95/EC).
MA2J7270GSilicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•VR = 50 V is guaranteed
•IF(AV) = 200 mA rectification is possible
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR50 VRepetitive peak reverse voltage VRRM 50 VForward current (Average) IF(AV) 200 mAPeak forward current IFM 300 mANon-repetitive peak forward IFSM 1Asurge current *
Junction temperature Tj150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VF1 IF = 30 mA 0.36 VVF2 IF = 200 mA 0.55 VReverse current IRVR = 50 V 200 µATerminal capacitance CtVR = 0 V, f = 1 MHz 30 pFReverse recovery time *trr IF = IR = 100 mA 3.0 nsIrr = 10 mA, RL = 100 Ω■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
ANote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 1 GHz. 4. *: trr measurement circuitNote) *:The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)