1
Publication date: November 2003 SKF00062BED

Switching Diodes

MA2S101

Silicon epitaxial planar type

For switching circuits
■Features
•High breakdown voltage: VR = 250 V
•Small terminal capacitance Ct
•Suitable for high-density mounting
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating UnitReverse voltage VR250 VRepetitive peak reverse voltage VRRM 250 VForward current IF100 mAPeak forward current IFM 225 mANon-repetitive peak forward IFSM 500 mA
surge current *
Junction temperature Tj150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 70 mA 1.2 VReverse current IRVR = 250 V 1.0 µATerminal capacitance CtVR = 0 V, f = 1 MHz 3.0 pFReverse recovery time *trr IF = IR = 10 mA 60 nsIrr = 1 mA , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: 1P
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2.Absolute frequency of input and output is 20 MHz.3.*: trr measurement circuitNote) *:t = 1 s
This product complies with the RoHS Directive (EU 2002/95/EC).