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Publication date: October 2007 SKF00074AED
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2S1010GSilicon epitaxial planar type
For switching circuits
■Features
•High breakdown voltage: VR = 250 V
•Small terminal capacitance Ct
•Suitable for high-density mounting
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR250 V
Repetitive peak reverse voltage VRRM 250 V
Forward current IF100 mA
Peak forward current IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 70 mA 1.2 V
Reverse current IRVR = 250 V 1.0 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 3.0 pF
Reverse recovery time *trr IF = IR = 10 mA 60 ns
Irr = 1 mA , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 20 MHz.
3.*: trr measurement circuit
Note) *:t = 1 s