Schottky Barrier Diodes (SBD)

1
Publication date: April 2004 SKH00028BEDMA2SD24

Silicon epitaxial planar type

For super high speed switching
■Features
•Forward current (Average) IF(AV) = 200 mA rectification is
possible
•Small reverse current IR
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR20 VRepetitive peak reverse voltage VRRM 20 VPeak forward current IFM 300 mAForward current (Average) IF(AV) 200 mANon-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °CNote) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Marking Symbol: 5L
Parameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 200 mA 0.50 0.58 VReverse current IRVR = 10 V 0.1 1.0 µATerminal capacitance CtVR = 0 V, f = 1 MHz 25 pFReverse recovery time *trr IF = IR = 100 mA 3 nsIrr = 10 mA, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A1: Anode2: CathodeEIAJ: SC-79 SSMini2-F1 PackageUnit: mm
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 250 MHz.4.*: trr measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).