Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00179AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SD250GSilicon epitaxial planar type
For super high speed switching
■Features
•Forward current (Average) IF(AV) = 200 mA rectification is possible
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR15 V
Repetitive peak reverse voltage VRRM 15 V
Forward current (Average) IF(AV) 200 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 0.39 V
Reverse current IRVR = 6 V 50 µA
Terminal capacitance CtVR = 1 V, f = 1 MHz 20 pF
Reverse recovery time *trr IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 250 MHz.
4.*:t
rr measurement circuit