Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00181AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SD300GSilicon epitaxial planar type
For super high speed switching
■Features
•Small reverse current: IR < 2 µA (at VR = 30 V)
•Optimum for high frequency rectification because of its short
reverse recovery time trr .
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Repetitive peak reverse voltage VRRM 30 V
Forward current (Average) IF(AV) 100 mA
Peak forward current IFM 200 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 10 mA 0.38 0.44 V
VF2 IF = 100 mA 0.51 0.58
Reverse current IR1 VR = 10 V 0.3 µA
IR2 VR = 30 V 2
Terminal capacitance CtVR = 0 V, f = 1 MHz 9 pF
Reverse recovery time *trr IF = IR = 100 mA 1 ns
Irr = 10 mA, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 250 MHz
4.*: trr measurement circuit
Note) * :
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
IF
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form
Analyzer
(SAS-8130)
Ri = 50 ΩVR
A