Schottky Barrier Diodes (SBD)
1
Publication date: April 2003 SKH00030BED
MA2SE01
Silicon epitaxial planar type
For mixer
■Features
•High-frequency wave detection is possible
•Low forward voltage VF
•Small terminal capacitance Ct
•SS-Mini type 2-pin package
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Maximum peak reverse voltage VRM 20 V
Forward current IF35 mA
Peak forward current IFM 100 mA
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.41 V
VF2 IF = 35 mA 1.0 V
Reverse current IRVR = 15 V 200 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 1.2 pF
Forward dynamic resistance rfIF = 5 mA 40 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: 4L
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
Unit: mm
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Rated input/output frequency: 2 GHz
This product complies with the RoHS Directive (EU 2002/95/EC).