1
Publication date: March 2004 SKL00012BED
PIN diodes
MA2SP05
Silicon epitaxial planar type
For high frequency attenuator
■Features
•High performance forward current IF controlled forward dy-
namic resistance rf
•Small terminal capacitance Ct
•Miniature package and surface mounting type
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF50 mA
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Marking Symbol: 6P
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 1.0 V
Reverse current IRVR = 60 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 2.4 pF
Forward dynamic resistance rfIF = 10 mA, f = 100 MHz 5.5 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
This product complies with the RoHS Directive (EU 2002/95/EC).